P-Channel MOSFET Transistor, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3

RS Stock No.: 919-5914Brand: VishayManufacturers Part No.: SI2333DDS-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

23 nC @ 8 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Country of Origin

China

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P.O.A.

P-Channel MOSFET Transistor, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3

P.O.A.

P-Channel MOSFET Transistor, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

23 nC @ 8 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Country of Origin

China

You may be interested in