Vishay TrenchFET P-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 SI2347DS-T1-GE3

RS Stock No.: 180-7778Brand: VishayManufacturers Part No.: SI2347DS-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.042 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Country of Origin

China

Stock information temporarily unavailable.

P.O.A.

Vishay TrenchFET P-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 SI2347DS-T1-GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

P.O.A.

Vishay TrenchFET P-Channel MOSFET, 5 A, 30 V, 3-Pin SOT-23 SI2347DS-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.042 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Country of Origin

China