N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3

RS Stock No.: 787-9235PBrand: VishayManufacturers Part No.: SI4190ADY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3
Select packaging type

P.O.A.

N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor