Dual N/P-Channel MOSFET Transistor, 3.8 A, 6.6 A, 20 V, 8-Pin SOIC Vishay SI4500BDY-T1-E3

Brand

Channel Type

N, P

Maximum Continuous Drain Current

3.8 A, 6.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ, 60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.3 W

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

11 nC @ 4.5 V, 6 nC @ 4.5 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China