N-Channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay SI4848DY-T1-GE3

RS Stock No.: 146-4444Brand: VishayManufacturers Part No.: SI4848DY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC

Height

1.55mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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P.O.A.

N-Channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay SI4848DY-T1-GE3

P.O.A.

N-Channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay SI4848DY-T1-GE3
Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

17 nC

Height

1.55mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V