Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.5 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.022 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Country of Origin
China
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P.O.A.
N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 Vishay SI4896DY-T1-E3
2500
P.O.A.
N-Channel MOSFET, 9.5 A, 80 V, 8-Pin SO-8 Vishay SI4896DY-T1-E3
Stock information temporarily unavailable.
2500
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.5 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.022 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
1
Country of Origin
China