Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Product details