Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
20
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
20
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Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details