P-Channel MOSFET Transistor, 4.1 A, 30 V, 8-Pin SOIC Vishay SI9435BDY-T1-E3

RS Stock No.: 699-7354Brand: VishayManufacturers Part No.: SI9435BDY-T1-E3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

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P.O.A.

P-Channel MOSFET Transistor, 4.1 A, 30 V, 8-Pin SOIC Vishay SI9435BDY-T1-E3
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P.O.A.

P-Channel MOSFET Transistor, 4.1 A, 30 V, 8-Pin SOIC Vishay SI9435BDY-T1-E3
Stock information temporarily unavailable.
Select packaging type
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

You may be interested in