Technical documents
Specifications
Brand
VishayProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
21A
Maximum Drain Source Voltage Vds
600V
Series
E
Package Type
TO-220
Maximum Drain Source Resistance Rds
0.18Ω
Typical Gate Charge Qg @ Vgs
86nC
Maximum Power Dissipation Pd
35W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Width
10.3 mm
Length
13.8mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
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P.O.A.
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P.O.A.
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Technical documents
Specifications
Brand
VishayProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
21A
Maximum Drain Source Voltage Vds
600V
Series
E
Package Type
TO-220
Maximum Drain Source Resistance Rds
0.18Ω
Typical Gate Charge Qg @ Vgs
86nC
Maximum Power Dissipation Pd
35W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Width
10.3 mm
Length
13.8mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
