Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3

RS Stock No.: 210-4966Brand: VishayManufacturers Part No.: SIHB11N80AE-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

P.O.A.

Each (In a Tube of 50) (ex VAT)

Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (In a Tube of 50) (ex VAT)

Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3

Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1