N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3

RS Stock No.: 210-4973Brand: VishayManufacturers Part No.: SiHB186N60EF-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Series

EF

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

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P.O.A.

N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3

50

Available in multiples of 1
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3
Stock information temporarily unavailable.

50

Available in multiples of 1
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Series

EF

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1