N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS Stock No.: 903-4504PBrand: VishayManufacturers Part No.: SiHB28N60EF-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3
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Production pack (Tube)

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Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

EF Series

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor