Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

RS Stock No.: 228-2863Brand: VishayManufacturers Part No.: SiHG080N60E-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si

P.O.A.

Each (In a Tube of 25) (ex VAT)

Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

Each (In a Tube of 25) (ex VAT)

Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

Stock information temporarily unavailable.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si