Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

RS Stock No.: 228-2870Brand: VishayManufacturers Part No.: SIHG24N80AE-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

P.O.A.

Each (In a Pack of 2) (ex VAT)

Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Each (In a Pack of 2) (ex VAT)

Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si