N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH186N60EF-T1GE3

RS Stock No.: 200-6811Brand: VishayManufacturers Part No.: SIHH186N60EF-T1GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A, 16 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.193 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

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P.O.A.

N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH186N60EF-T1GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH186N60EF-T1GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A, 16 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

PowerPAK 8 x 8

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

0.193 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1