N-Channel MOSFET, 65.8 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR106ADP-T1-RE3

RS Stock No.: 200-6865Brand: VishayManufacturers Part No.: SiR106ADP-T1-RE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65.8 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.008 Ω, 0.009 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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P.O.A.

N-Channel MOSFET, 65.8 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR106ADP-T1-RE3

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

N-Channel MOSFET, 65.8 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR106ADP-T1-RE3
Stock information temporarily unavailable.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

65.8 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.008 Ω, 0.009 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1