Vishay N-Channel MOSFET, 67.5 A, 100 V, 8-Pin PowerPAK SO-8 SiR882BDP-T1-RE3

RS Stock No.: 210-5007Brand: VishayManufacturers Part No.: SiR882BDP-T1-RE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

67.5 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0069 Ω

Maximum Gate Threshold Voltage

1 → 2.3V

Number of Elements per Chip

1

Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 67.5 A, 100 V, 8-Pin PowerPAK SO-8 SiR882BDP-T1-RE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (In a Pack of 10) (ex VAT)

Vishay N-Channel MOSFET, 67.5 A, 100 V, 8-Pin PowerPAK SO-8 SiR882BDP-T1-RE3

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

67.5 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0069 Ω

Maximum Gate Threshold Voltage

1 → 2.3V

Number of Elements per Chip

1