Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3

RS Stock No.: 787-9367PBrand: VishayManufacturers Part No.: SIRA00DP-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

147 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Minimum Operating Temperature

-55 °C

Height

1.12mm

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
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Production pack (Reel)

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Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

147 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Minimum Operating Temperature

-55 °C

Height

1.12mm

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor