Vishay Silicon P-Channel MOSFET, 227 A, 30 V, 8-Pin SO-8 SIRS4301DP-T1-GE3

RS Stock No.: 279-9961PBrand: VishayManufacturers Part No.: SIRS4301DP-T1-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

227 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

Stock information temporarily unavailable.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay Silicon P-Channel MOSFET, 227 A, 30 V, 8-Pin SO-8 SIRS4301DP-T1-GE3
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay Silicon P-Channel MOSFET, 227 A, 30 V, 8-Pin SO-8 SIRS4301DP-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

227 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon