Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3

RS Stock No.: 228-2925PBrand: VishayManufacturers Part No.: SiS590DN-T1-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.167 O, 0.251 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 V, 2.5 V

Transistor Material

Si

Number of Elements per Chip

2

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3

Stock information temporarily unavailable.

Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.167 O, 0.251 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 V, 2.5 V

Transistor Material

Si

Number of Elements per Chip

2