N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3

RS Stock No.: 200-6855Brand: VishayManufacturers Part No.: SiSS22LDN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

92.5 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0051 Ω, 0.00365 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

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P.O.A.

N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

N-Channel MOSFET, 92.5 A, 60 V, 8-Pin PowerPAK 1212-8S Vishay SiSS22LDN-T1-GE3
Stock information temporarily unavailable.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

92.5 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0051 Ω, 0.00365 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1