N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3

RS Stock No.: 200-6859Brand: VishayManufacturers Part No.: SiSS32LDN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8S

Pin Count

8

Maximum Drain Source Resistance

0.0072 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

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P.O.A.

N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8S

Pin Count

8

Maximum Drain Source Resistance

0.0072 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV