Vishay TrenchFET® Gen III P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS63DN-T1-GE3

RS Stock No.: 200-6849Brand: VishayManufacturers Part No.: SiSS63DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

127.5 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET® Gen III

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.007 Ω, 0.0027 Ω, 0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

1

Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 50) (ex VAT)

Vishay TrenchFET® Gen III P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS63DN-T1-GE3

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Each (In a Pack of 50) (ex VAT)

Vishay TrenchFET® Gen III P-Channel MOSFET, 127.5 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS63DN-T1-GE3
Stock information temporarily unavailable.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

127.5 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET® Gen III

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.007 Ω, 0.0027 Ω, 0.0036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

1