Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3

RS Stock No.: 228-2938Brand: VishayManufacturers Part No.: SiZ340BDT-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

69.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00856 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Transistor Material

Si

Number of Elements per Chip

2

Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 69.3 A, 30 V, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

69.3 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00856 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Transistor Material

Si

Number of Elements per Chip

2