Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3

RS Stock No.: 204-7265Brand: VishayManufacturers Part No.: SIZ998BDT-T1-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

94.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5

Series

SiZ998BDT

Pin Count

8

Maximum Drain Source Resistance

0.00439 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

94.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5

Series

SiZ998BDT

Pin Count

8

Maximum Drain Source Resistance

0.00439 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2