Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

RS Stock No.: 200-6872Brand: VishayManufacturers Part No.: SiZF360DT-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

80 A, 143 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

6

Maximum Drain Source Resistance

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV

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P.O.A.

Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
Stock information temporarily unavailable.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

80 A, 143 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

6

Maximum Drain Source Resistance

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV