P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3

RS Stock No.: 819-3901Brand: VishayManufacturers Part No.: SQ2315ES-T1_GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Series

SQ Rugged

Minimum Operating Temperature

-55 °C

Height

1.02mm

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Select packaging type

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

P.O.A.

P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

92 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

3.04mm

Typical Gate Charge @ Vgs

8.4 nC @ 4.5 V

Series

SQ Rugged

Minimum Operating Temperature

-55 °C

Height

1.02mm

Country of Origin

China

Product details

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor