N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3

RS Stock No.: 200-6792Brand: VishayManufacturers Part No.: SQD10950E_GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

250 V

Series

AEC-Q101, Automotive, TrenchFET®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.18 Ω, 0.162 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

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P.O.A.

N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3

2000

Available in multiples of 1
2000P.O.A.
4000P.O.A.
6000P.O.A.
8000P.O.A.
10000P.O.A.
12000P.O.A.
14000P.O.A.
16000P.O.A.
18000P.O.A.
20000P.O.A.
22000P.O.A.
24000P.O.A.
26000P.O.A.
28000P.O.A.
30000P.O.A.

P.O.A.

N-Channel MOSFET, 11.5 A, 250 V, 3-Pin DPAK Vishay SQD10950E_GE3
Stock information temporarily unavailable.

2000

Available in multiples of 1
2000P.O.A.
4000P.O.A.
6000P.O.A.
8000P.O.A.
10000P.O.A.
12000P.O.A.
14000P.O.A.
16000P.O.A.
18000P.O.A.
20000P.O.A.
22000P.O.A.
24000P.O.A.
26000P.O.A.
28000P.O.A.
30000P.O.A.

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

250 V

Series

AEC-Q101, Automotive, TrenchFET®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.18 Ω, 0.162 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1