Wolfspeed 600V 4A, SiC Schottky Diode, 3-Pin DPAK C3D04060E
Technical documents
Specifications
Brand
WolfspeedMounting Type
Surface Mount
Package Type
DPAK (TO-252)
Maximum Continuous Forward Current
4A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
3
Maximum Forward Voltage Drop
2.4V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
110A
Country of Origin
China
Product details
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters.
• 600, 650, 1200 and 1700 Voltage ratings
• Zero reverse recovery current and forward recovery voltage
• Temperature-independent switching behaviour
• Extremely fast switching times with minimal losses
• Positive temperature coefficient forward voltage
• Devices can be paralleled without thermal runaway
• Reduction in heatsink requirements
• Optimized for PFC boost diode applications
Diodes and Rectifiers, Cree Wolfspeed
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P.O.A.
75
P.O.A.
75
Technical documents
Specifications
Brand
WolfspeedMounting Type
Surface Mount
Package Type
DPAK (TO-252)
Maximum Continuous Forward Current
4A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
SiC Schottky
Pin Count
3
Maximum Forward Voltage Drop
2.4V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
110A
Country of Origin
China
Product details
Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed
A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters.
• 600, 650, 1200 and 1700 Voltage ratings
• Zero reverse recovery current and forward recovery voltage
• Temperature-independent switching behaviour
• Extremely fast switching times with minimal losses
• Positive temperature coefficient forward voltage
• Devices can be paralleled without thermal runaway
• Reduction in heatsink requirements
• Optimized for PFC boost diode applications