Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

RS Stock No.: 150-3947Brand: WolfspeedManufacturers Part No.: C3M0120100J
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Width

9.12mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Maximum Operating Temperature

+150 °C

Height

4.32mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

P.O.A.

Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

P.O.A.

Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Width

9.12mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Maximum Operating Temperature

+150 °C

Height

4.32mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V