Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1

RS Stock No.: 220-7358Brand: InfineonManufacturers Part No.: BSZ0910NDXTMA1IMPA: 0
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Technical documents

Specifications

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

2

Pin Count

8

Mounting Type

Surface Mount

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

2V

Series

OptiMOS

Dimensions

120 x 65mm

Maximum Continuous Drain Current

25 A

Brand

Infineon

Software Version

V14

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P.O.A.

Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Technical documents

Specifications

Channel Mode

Enhancement

Channel Type

N

Number of Elements per Chip

2

Pin Count

8

Mounting Type

Surface Mount

Maximum Drain Source Voltage

30 V

Maximum Gate Threshold Voltage

2V

Series

OptiMOS

Dimensions

120 x 65mm

Maximum Continuous Drain Current

25 A

Brand

Infineon

Software Version

V14