N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1

RS Stock No.: 218-3043PBrand: InfineonManufacturers Part No.: IPD35N10S3L26ATMA1
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1
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Production pack (Reel)

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Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15P.O.A.
30P.O.A.
45P.O.A.
60P.O.A.
75P.O.A.
90P.O.A.
105P.O.A.
120P.O.A.
135P.O.A.
150P.O.A.
165P.O.A.
180P.O.A.
195P.O.A.
210P.O.A.
225P.O.A.

P.O.A.

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15P.O.A.
30P.O.A.
45P.O.A.
60P.O.A.
75P.O.A.
90P.O.A.
105P.O.A.
120P.O.A.
135P.O.A.
150P.O.A.
165P.O.A.
180P.O.A.
195P.O.A.
210P.O.A.
225P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si