N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK Infineon IPI80N06S407AKSA2

RS Stock No.: 214-9065Brand: InfineonManufacturers Part No.: IPI80N06S407AKSA2
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Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0074 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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P.O.A.

N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK Infineon IPI80N06S407AKSA2

50

Available in multiples of 1
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK Infineon IPI80N06S407AKSA2
Stock information temporarily unavailable.

50

Available in multiples of 1
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Technical documents

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0074 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si