Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si
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P.O.A.
4800
P.O.A.
4800
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si