P-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC STMicroelectronics STS10P4LLF6
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Forward Diode Voltage
1.1V
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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P.O.A.
2500
P.O.A.
2500
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
STripFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
34 nC @ 4.5 V
Height
1.5mm
Forward Diode Voltage
1.1V
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.