Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

Brand

Channel Type

N

Maximum Continuous Drain Current

272 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

4.83mm

Country of Origin

Philippines