N-Channel MOSFET Transistor, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4410BDY-T1-E3

RS Stock No.: 710-4702Brand: VishayManufacturers Part No.: SI4410BDY-T1-E3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.4 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

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P.O.A.

N-Channel MOSFET Transistor, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4410BDY-T1-E3
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Standard

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Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

N-Channel MOSFET Transistor, 7.5 A, 30 V, 8-Pin SOIC Vishay SI4410BDY-T1-E3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.4 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

You may be interested in