P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

RS Stock No.: 812-3215Brand: VishayManufacturers Part No.: SI4431CDY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
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P.O.A.

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3
Stock information temporarily unavailable.
Select packaging type
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.55mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

You may be interested in