Diodes Inc N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line VN10LP
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Standard
5
P.O.A.
Standard
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 5 - 20 | P.O.A. |
| 25 - 95 | P.O.A. |
| 100 - 245 | P.O.A. |
| 250+ | P.O.A. |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
270 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.