Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
450 mA
Maximum Drain Source Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
4.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Standard
5
P.O.A.
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
5 - 20 | P.O.A. |
25 - 95 | P.O.A. |
100 - 245 | P.O.A. |
250 - 495 | P.O.A. |
500+ | P.O.A. |
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
450 mA
Maximum Drain Source Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
4.95mm
Minimum Operating Temperature
-55 °C
Product details